TRS30N120HB - SiC Schottky Barrier Diode
TRS30N120HB Features
* (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ.) (4) Low reverse current: IR (Per Leg) = 1.4 µA (typ.) 3. Packaging and Internal Circuit TRS30N120HB TO-247 1: Anode 2: Cathode (heatsink) 3: Anode
