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TRS30N120HB Datasheet - Toshiba

TRS30N120HB SiC Schottky Barrier Diode

TRS30N120HB Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ.) (4) Low reverse current: IR (Per Leg) = 1.4 µA (typ.) 3. Packaging and Internal Circuit TRS30N120HB TO-247 1: Anode 2: Cathode (heatsink) 3: Anode

TRS30N120HB Datasheet (438.70 KB)

Preview of TRS30N120HB PDF

Datasheet Details

Part number:

TRS30N120HB

Manufacturer:

Toshiba ↗

File Size:

438.70 KB

Description:

Sic schottky barrier diode.

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TRS30N120HB SiC Schottky Barrier Diode Toshiba

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