TRS30N120HB SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS30N120HB 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Sup.

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Datasheet Specifications

Part number: TRS30N120HB
Manufacturer: Toshiba ↗
File Size: 438.70 KB
Datasheet: TRS30N120HB-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ. ) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ. ) (4) Low reverse current: IR (Per Leg) = 1.4 µA (typ. ) 3. Packaging and Internal Circuit TRS30N120HB TO-247 1: Anode 2: Cathode (heatsink) 3: Anode

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS30N120HB Distributors

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TRS30N120HB SiC Schottky Barrier Diode Toshiba

Toshiba TRS30N120HB-like datasheet