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1SV324 Silicon Diode

1SV324 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV324 1SV324 TCXO/VCO * High capacitance ratio: C1V / C4V = 4.3 (typ.) * Low series re.

1SV324 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Silicon Diode Toshiba Semiconductor
Toshiba Semiconductor 1SV324-like datasheet