Datasheet4U Logo Datasheet4U.com

2SC2510A - Silicon NPN epitaxial planar type Transistor

2SC2510A Description

2SC2510A www.DataSheet4U.com TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPP.

2SC2510A Applications

* (28V SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min. ) : Gp = 12.2dB (Min. ) : ηC = 35% (Min. ) Intermodulation Distortion : IMD =
* 30dB (Max. ) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC C

📥 Download Datasheet

Preview of 2SC2510A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SC2512 - Silicon NPN Triple Diffused Transistor (Hitachi Semiconductor)
  • 2SC2516 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2517 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2518 - NPN SILICON POWER TRANSISTOR (NEC)
  • 2SC2519 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SC2501 - NPN Transistor (INCHANGE)
  • 2SC2502 - NPN Transistor (INCHANGE)
  • 2SC2504 - Transistor (Shindengen)

📌 All Tags

Silicon NPN epitaxial planar type Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SC2510A-like datasheet