Datasheet Details
- Part number
- 2SC3279
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 104.56 KB
- Datasheet
- 2SC3279_ToshibaSemiconductor.pdf
- Description
- NPN TRANSISTOR
2SC3279 Description
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications * High .
2SC3279 Applications
* Medium Power Amplifier Applications
* High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ. ) (VCE = 1 V, IC = 2 A)
* Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Unit: mm
Maximum Ratings (Ta = 2
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