Datasheet Details
- Part number
- 2SD1220
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 143.79 KB
- Datasheet
- 2SD1220_ToshibaSemiconductor.pdf
- Description
- Silicon NPN Transistor
2SD1220 Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm * Complementary to 2SB90.
2SD1220 Features
* mitation, the EU RoHS Directive. TOSHIBA assumes no liability for d
2SD1220 Applications
* Unit: mm
* Complementary to 2SB905
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
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