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GT25Q102 - Silicon N-Channel IGBT

GT25Q102 Description

GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm The 3rd Generation Enha.

GT25Q102 Applications

* Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
* Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Ju

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Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT25Q102-like datasheet

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