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K3563 2SK3563

K3563 Description

www.DataSheet4U.com TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit：ｍｍ Switching Regulator App.

K3563 Applications

* 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V

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2SK3563 Toshiba Semiconductor
Toshiba Semiconductor K3563-like datasheet