TH50VSF2580AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP

Toshiba Semiconductor

TH50VSF2580AASB Description

TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE .
The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory.

TH50VSF2580AASB Features

* Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www. DataSheet4U. comCCf
* Data retention supply voltage VCCs = 1.5 V~3.6 V
* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level)
* Bl

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Datasheet Details

Part number: TH50VSF2580AASB
Manufacturer: Toshiba ↗ Semiconductor
File Size: 609.49 KB
Datasheet: TH50VSF2580AASB_ToshibaSemiconductor.pdf
Description: SRAM AND FLASH MEMORY MIXED MULTI-CHIP

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SRAM AND FLASH MEMORY MIXED MULTI-CHIP Toshiba Semiconductor

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