TK60P03M1 - MOSFETs

Toshiba Semiconductor

Datasheet Details

(1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain cu.

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