Datasheet4U Logo Datasheet4U.com

TK8A60DA Transistor

TK8A60DA Description

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications * * * .

TK8A60DA Features

* t, equipment used for aut

TK8A60DA Applications

* Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings

📥 Download Datasheet

Preview of TK8A60DA PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TK8A65W - N-Channel MOSFET (INCHANGE)
  • TK8A25DA - Silicon N-Channel MOSFET (Toshiba)
  • TK8A45D - N-Channel MOSFET (INCHANGE)
  • TK8A50D - N-Channel MOSFET (Toshiba)
  • TK8A55DA - Silicon N-Channel MOSFET (Toshiba)
  • TK8011 - 1 key touch detector (Tenx)
  • TK8012 - 2 key touch detector (Tenx)
  • TK8021 - 1 key touch detector (Tenx)

📌 All Tags

Transistor Toshiba Semiconductor
Toshiba Semiconductor TK8A60DA-like datasheet