Datasheet4U Logo Datasheet4U.com

VR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

VR4N Description

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak .

VR4N Applications

* (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
* Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Sy

📥 Download Datasheet

Preview of VR4N PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VR4N
Manufacturer
Toshiba ↗ Semiconductor
File Size
120.00 KB
Datasheet
VR4N_ToshibaSemiconductor.pdf
Description
TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

📁 Related Datasheet

  • VR4102 - 64/32-Bit Microprocessor (NEC)
  • VR485 - Voltage Regulator (Basler)

📌 All Tags

TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications fast recovery Toshiba Semiconductor
Toshiba Semiconductor VR4N-like datasheet