AGR09070EF Datasheet - TriQuint Semiconductor

AGR09070EF Lateral MOSFET

AGR09070EF Introduction 70 W, 921 MHz 960 MHz, N-Channel E-Mode, Lateral MOSFET Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufac.

AGR09070EF Features

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* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of t

AGR09070EF_TriQuintSemiconductor.pdf