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AGR09070EF Lateral MOSFET

AGR09070EF Description

AGR09070EF Introduction 70 W, 921 MHz *960 MHz, N-Channel E-Mode, Lateral MOSFET Table 1.Thermal Characteristics Parameter Thermal Resistance.

AGR09070EF Features

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* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of t

AGR09070EF Applications

* This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 70 W, it is ideally suited for today's wireless base station RF power amplifier applicatio

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