AGR09090EF Datasheet - TriQuint Semiconductor

AGR09090EF Lateral MOSFET

AGR09090EF 90 W, 865 MHz 960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), cellular, and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packa.

AGR09090EF Features

* Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 40 W):

* Modulation spectrum: @ ±400 kHz =

* 60 dBc. @ ±600 kHz =

* 72 dBc.

* Error vector magnitude (EVM) = 2.3%. www.DataSheet4U.com Typical performance over entire GSM band:

* P1dB: 105 W typical.

AGR09090EF Datasheet (527.54 KB)