AGR09180EF Datasheet (TriQuint Semiconductor)

AGR09180EF, Lateral MOSFET

AGR09180EF 180 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications.

This device i

AGR09180EF Features

* Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, traffic codes 8

* 13:

* Output power (POUT): 38 W.

* Power gain: 18.25 dB.

* Efficiency: 27%.

* Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset:

* 45 dBc)