AGR09180EF Datasheet - TriQuint Semiconductor

AGR09180EF Lateral MOSFET

AGR09180EF 180 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device i.

AGR09180EF Features

* Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, traffic codes 8

* 13:

* Output power (POUT): 38 W.

* Power gain: 18.25 dB.

* Efficiency: 27%.

* Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset:

* 45 dBc)

AGR09180EF_TriQuintSemiconductor.pdf

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Datasheet Details

Part number:

AGR09180EF

Manufacturer:

TriQuint Semiconductor

File Size:

447.12 KB

Description:

Lateral mosfet.

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AGR09180EF AGR09180EF Lateral MOSFET TriQuint Semiconductor

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