AGR09085E Datasheet - TriQuint Semiconductor

AGR09085E Lateral MOSFET

AGR09085E 85 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on a.

AGR09085E Features

* Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, and traffic codes 8

* 13:

* Output power (POUT): 20 W.

* Power gain: 18 dB.

* Efficiency: 28%.

* Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset:

* 45 dBc)

AGR09085E_TriQuintSemiconductor.pdf

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Datasheet Details

Part number:

AGR09085E

Manufacturer:

TriQuint Semiconductor

File Size:

365.43 KB

Description:

Lateral mosfet.

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AGR09085E AGR09085E Lateral MOSFET TriQuint Semiconductor

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