AGR18030EF Datasheet (TriQuint Semiconductor)

AGR18030EF, Lateral MOSFET

AGR18030EF 30 W, 1.805 GHz 1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications.

This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability.

AGR18030EF Features

* Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 10 W)

* Error vector magnitude (EVM): 1.6%

* Power gain: 15 dB www.DataSheet4U.com

* Drain efficiency: 30%

* Modulation spectrum: @ ±400 kHz =

* 64 dBc. @ ±600 kHz =

* 71 dBc. Typical contin