AGR18030EF Lateral MOSFET

TriQuint Semiconductor

Description

AGR18030EF 30 W, 1.805 GHz *1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diff.

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Datasheet Specifications

Part number: AGR18030EF
Manufacturer: TriQuint Semiconductor
File Size: 436.69 KB
Datasheet: AGR18030EF_TriQuintSemiconductor.pdf
Description: Lateral MOSFET

Features

* Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 10 W)
* Error vector magnitude (EVM): 1.6%
* Power gain: 15 dB www. DataSheet4U. com
* Drain efficiency: 30%
* Modulation spectrum: @ ±400 kHz =
* 64 dBc. @ ±600 kHz =
* 71 dBc. Typical contin

Applications

* This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 30 W, which makes it ideally suited for today’s RF power amplifier applications. Ta

AGR18030EF Distributors

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AGR18030EF Lateral MOSFET TriQuint Semiconductor

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