AGR18030EF - Lateral MOSFET

TriQuint Semiconductor

Datasheet Details

Part number	AGR18030EF
Manufacturer	TriQuint Semiconductor
File Size	436.69 KB
Description	Lateral MOSFET
Datasheet	AGR18030EF_TriQuintSemiconductor.pdf

Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 10 W).
Error vector magnitude (EVM): 1.6%.
Power gain: 15 dB www. DataSheet4U. com.
Drain efficiency: 30%.
Modulation spectrum: @ ±400 kHz =.
64 dBc. @ ±600 kHz =.
71 dBc. Typical continuous wave (CW) performance over entire digital communication system (DCS) band:.
P1dB: 33 W typical (typ).
Power gain: @ P1dB = 14 dB.
Efficiency: @ P1dB = 51% typ.

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Published: Oct 5, 2009 |