* Typical performance over entire GSM band:
* P1dB: 50 W typical.
* Power gain @ P1dB = 14.0 dB continuous wave (CW).
* Efficiency @ P1dB = 54% typical CW.
* Return loss:
* 10 dB. Device Performance Features High-reliability, gold-metalization process. Low hot c
AGR19045EF Datasheet (372.35 KB)
AGR19045EF
TriQuint Semiconductor
372.35 KB
Transistor.
AGR19045EF 45 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused met.
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