AGR19045EF - Transistor

TriQuint Semiconductor

Datasheet Details

Part number	AGR19045EF
Manufacturer	TriQuint Semiconductor
File Size	372.35 KB
Description	Transistor
Datasheet	AGR19045EF_TriQuintSemiconductor.pdf

Typical performance over entire GSM band:.
P1dB: 50 W typical.
Power gain @ P1dB = 14.0 dB continuous wave (CW).
Efficiency @ P1dB = 54% typical CW.
Return loss:.
10 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Figure 1. AGR19045EF (flanged) Package Typical two carrier N-CDMA performance: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, I.

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Published: Oct 5, 2009 |