* Typical performance over entire GSM band:
* P1dB: 30 W typical.
* Continuous wave (CW) power gain: @ P1dB = 15 dB.
* CW efficiency @ P1dB = 55% typical.
* Return loss:
* 12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot ca
AGR19030EF Datasheet (365.89 KB)
AGR19030EF
TriQuint Semiconductor
365.89 KB
Transistor.
AGR19030EF 30 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused met.
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