AGR19180EF Datasheet - TriQuint Semiconductor

AGR19180EF Transistor

AGR19180EF 180 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier application.

AGR19180EF Features

* High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of

AGR19180EF_TriQuintSemiconductor.pdf