* High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of
AGR19180EF Datasheet (446.25 KB)
AGR19180EF
TriQuint Semiconductor
446.25 KB
Transistor.
AGR19180EF 180 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused m.
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