* Typical performance over entire GSM band:
* P1dB: 90 W typical.
* Continuous wave (CW) power gain: @ P1dB = 14.0 dB.
* CW Efficiency @ P1dB = 50% typical.
* Return loss:
* 12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot
AGR19090E Datasheet (403.23 KB)
AGR19090E
TriQuint Semiconductor
403.23 KB
Transistor.
AGR19090E 90 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal.
📁 Related Datasheet
AGR19030EF Transistor (TriQuint Semiconductor)
AGR19045EF Transistor (TriQuint Semiconductor)
AGR19060E Transistor (TriQuint Semiconductor)
AGR19125E Transistor (TriQuint Semiconductor)
AGR19180EF Transistor (TriQuint Semiconductor)
AGR18030EF Lateral MOSFET (TriQuint Semiconductor)
AGR18045E Lateral MOSFET (TriQuint Semiconductor)
AGR18060E Lateral MOSFET (TriQuint Semiconductor)
AGR18090E Transistor (TriQuint Semiconductor)
AGR18125E Transistor (TriQuint Semiconductor)
