AGR19090E Datasheet - TriQuint Semiconductor

AGR19090E Transistor

AGR19090E 90 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier app.

AGR19090E Features

* Typical performance over entire GSM band:

* P1dB: 90 W typical.

* Continuous wave (CW) power gain: @ P1dB = 14.0 dB.

* CW Efficiency @ P1dB = 50% typical.

* Return loss:

* 12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot

AGR19090E_TriQuintSemiconductor.pdf