AGR19090E Transistor

TriQuint Semiconductor

Description

AGR19090E 90 W, 1930 MHz *1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal.

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Datasheet Specifications

Part number: AGR19090E
Manufacturer: TriQuint Semiconductor
File Size: 403.23 KB
Datasheet: AGR19090E_TriQuintSemiconductor.pdf
Description: Transistor

Features

* Typical performance over entire GSM band:
* P1dB: 90 W typical.
* Continuous wave (CW) power gain: @ P1dB = 14.0 dB.
* CW Efficiency @ P1dB = 50% typical.
* Return loss:
* 12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot

AGR19090E Distributors

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AGR19090E Transistor TriQuint Semiconductor

TriQuint Semiconductor AGR19090E-like datasheet