* Typical performance over entire GSM band:
* P1dB: 60 W typical.
* Continuous wave (CW) power gain: @ P1dB = 14.5 dB.
* CW efficiency @ P1dB = 53% typical.
* Return loss:
* 12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot
AGR19060E Datasheet (423.37 KB)
AGR19060E
TriQuint Semiconductor
423.37 KB
Transistor.
AGR19060E 60 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal.
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