AGR19060E Transistor

TriQuint Semiconductor

Description

AGR19060E 60 W, 1930 MHz *1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal.

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Datasheet Specifications

Part number: AGR19060E
Manufacturer: TriQuint Semiconductor
File Size: 423.37 KB
Datasheet: AGR19060E_TriQuintSemiconductor.pdf
Description: Transistor

Features

* Typical performance over entire GSM band:
* P1dB: 60 W typical.
* Continuous wave (CW) power gain: @ P1dB = 14.5 dB.
* CW efficiency @ P1dB = 53% typical.
* Return loss:
* 12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot

AGR19060E Distributors

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AGR19060E Transistor TriQuint Semiconductor

TriQuint Semiconductor AGR19060E-like datasheet