Datasheet Specifications
- Part number
- AGR19125E
- Manufacturer
- TriQuint Semiconductor
- File Size
- 406.21 KB
- Datasheet
- AGR19125E_TriQuintSemiconductor.pdf
- Description
- Transistor
Description
AGR19125E 125 W, 1930 MHz *1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused met.
Features
* Typical 2 carrier, N-CDMA performance for VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz, F2 = 1961.25 MHz, IS-95 (pilot, paging, sync, traffic channels 8Applications
* Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W Table 2. Absolute Maximum RatingsAGR19125E Distributors
📁 Related Datasheet
📌 All Tags