AGR19125E Datasheet - TriQuint Semiconductor

AGR19125E Transistor

AGR19125E 125 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz 1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125.

AGR19125E Features

* Typical 2 carrier, N-CDMA performance for VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz, F2 = 1961.25 MHz, IS-95 (pilot, paging, sync, traffic channels 8

* 13) 1.2288 MHz channel bandwidth (BW). Adjacent channels measured www.DataSheet4U.com over a 30 kHz BW at F1

* 0.885 MHz and F2 + 0.

AGR19125E_TriQuintSemiconductor.pdf