AGR18060E, TriQuint Semiconductor
AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Introduction
The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semic.
AGR18090E, TriQuint Semiconductor
Preliminary Data Sheet September 2003
AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18090E is a high-voltage, go.
AGR19030EF, TriQuint Semiconductor
AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide.
AGR19045EF, TriQuint Semiconductor
AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide.
AGR19060E, TriQuint Semiconductor
AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide s.
AGR19090E, TriQuint Semiconductor
AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide s.
