Datasheet Specifications
- Part number
- AGR18045E
- Manufacturer
- TriQuint Semiconductor
- File Size
- 442.89 KB
- Datasheet
- AGR18045E_TriQuintSemiconductor.pdf
- Description
- Lateral MOSFET
Description
AGR18045E 45 W, 1.805 GHz *1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffus.
Features
* Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 15 W)Applications
* This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 45 W, which makes it ideally suited for today’s RF power amplifier applications. TaAGR18045E Distributors
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