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* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of t
AGR18125E Datasheet (391.86 KB)
AGR18125E
TriQuint Semiconductor
391.86 KB
Transistor.
Product Brief AGR18125E 125 W, 1.805 GHz 1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18125E is a 125 W, 26 V, N-channel goldmeta.
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