AGR18125E Transistor

TriQuint Semiconductor

Description

Product Brief AGR18125E 125 W, 1.805 GHz *1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18125E is a 125 W, 26 V, N-channel goldmeta.

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Datasheet Specifications

Part number: AGR18125E
Manufacturer: TriQuint Semiconductor
File Size: 391.86 KB
Datasheet: AGR18125E_TriQuintSemiconductor.pdf
Description: Transistor

Features

* www. DataSheet4U. com
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of t

Applications

* This device is manufactured using advanced LDMOS technology offering state-of-theart performance and reliability. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 125 W which makes it ideally suited for today’s RF power amplifier applications. )

AGR18125E Distributors

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AGR18125E Transistor TriQuint Semiconductor

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