AGR18090E Datasheet (TriQuint Semiconductor)

AGR18090E, Transistor

Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz 1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications.

This device is manufactured using advanced LDMOS technology offering state-of-the-art performance

AGR18090E Features

* Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 30 W):

* Modulation spectrum: www.DataSheet4U.com @ ±400 kHz =

* 63 dBc. @ ±600 kHz =

* 73 dBc.

* Error vector magnitude (EVM) = 1.7%.

* Gain = 15 dB.

* Drain Efficiency = 31%. Typical conti