* Typical EDGE performance: 1880 MHz, 26 V, IDQ = 500 mA
* Output power (POUT): 20 W.
* Power gain: 15 dB. www.DataSheet4U.com
* Efficiency: 34%.
* Modulation spectrum: @ ±400 kHz =
* 62 dBc. @ ±600 kHz =
* 73 dBc.
* Error vector magnitude (EVM) =
AGR18060E Datasheet (437.04 KB)
AGR18060E
TriQuint Semiconductor
437.04 KB
Lateral mosfet.
AGR18060E 60 W, 1805 MHz 1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxi.
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