AGR09130E Lateral MOSFET

TriQuint Semiconductor

Description

t Copy Only AGR09130E 130 W, 921 MHz *960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09130E is a high-voltage, laterally diffus.

📥 Download Datasheet

AGR09130E Datasheet Preview — Preview of AGR09130E PDF

Datasheet Specifications

Part number: AGR09130E
Manufacturer: TriQuint Semiconductor
File Size: 477.75 KB
Datasheet: AGR09130E_TriQuintSemiconductor.pdf
Description: Lateral MOSFET

Features

* Typical performance ratings are for the EDGE format: 3GPP GSM 05.05:
* Output power (POUT): 50 W.
* Power gain: 17.8 dB.
* Modulation spectrum: @ ±400 kHz =
* 60 dBc. @ ±600 kHz =
* 72 dBc.
* Error vector magnitude (EVM) = 1.8%.
* Return loss:

Applications

* This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, and reliability. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 130 W, it is ideally suited for today's RF power amplifier

AGR09130E Distributors

📁 Related Datasheet

AGR09045E AGR21010E AGRF1000 AGRF1100 AGRF1200 AGRF1400

📌 All Tags

AGR09130E Lateral MOSFET TriQuint Semiconductor

TriQuint Semiconductor AGR09130E-like datasheet