AGR09130E Datasheet (TriQuint Semiconductor)

AGR09130E, Lateral MOSFET

t Copy Only AGR09130E 130 W, 921 MHz 960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications.

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AGR09130E Features

* Typical performance ratings are for the EDGE format: 3GPP GSM 05.05:

* Output power (POUT): 50 W.

* Power gain: 17.8 dB.

* Modulation spectrum: @ ±400 kHz =

* 60 dBc. @ ±600 kHz =

* 72 dBc.

* Error vector magnitude (EVM) = 1.8%.

* Return loss: