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TGA2576-2-FL

GaN Power Amplifier

TGA2576-2-FL Features

* Frequency Range: 2.5 to 6 GHz

* PSAT: 46.5 dBm @ PIN = 26dBm, CW

* PAE: 36%

* Small Signal Gain: 29 dB

* Bias: VD = 30 V, IDQ = 1.55 A, VG =

* 2.5 V Typical

* Dimensions: 11.4 x 17.3 x 3.0 mm. Functional Block Diagram General Description TriQuint’s TGA2576-2-FL is

TGA2576-2-FL General Description

TriQuint’s TGA2576-2-FL is a wideband power amplifier fabricated on TriQuint’s proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain. For ideal thermal m.

TGA2576-2-FL Datasheet (599.20 KB)

Preview of TGA2576-2-FL PDF

Datasheet Details

Part number:

TGA2576-2-FL

Manufacturer:

TriQuint Semiconductor

File Size:

599.20 KB

Description:

Gan power amplifier.
Applications
* Communications
* Electronic Warfare
* Test Instrumentation
* EMC Amplifier TGA2576-2-FL 2.5 to 6GHz 40W GaN Power Ampl.

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TAGS

TGA2576-2-FL GaN Power Amplifier TriQuint Semiconductor

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