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TGA2576-FL Datasheet - TriQuint Semiconductor

TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier

TriQuint’s TGA2576-FL is a packaged wideband power amplifier fabricated on TriQuint’s production-released 0.25um GaN on SiC process. Operating from 2.5 GHz to 6 GHz, it achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain. Fully matched to 50 ohms and with integrated DC bloc.

TGA2576-FL Features

* Frequency Range: 2.5

* 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm PAE: 35 % Small Signal Gain: 26 dB Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical Dimensions: 11.4 x 17.3 x 3.0 mm Functional Block Diagram 1 2 10 9 3 8 4 5 www.Da

TGA2576-FL Datasheet (381.18 KB)

Preview of TGA2576-FL PDF

Datasheet Details

Part number:

TGA2576-FL

Manufacturer:

TriQuint Semiconductor

File Size:

381.18 KB

Description:

2.5 to 6 ghz gan hemt power amplifier.

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TAGS

TGA2576-FL 2.5 GHz GaN HEMT Power Amplifier TriQuint Semiconductor

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