TGA2573 Datasheet - TriQuint Semiconductor

TGA2573 2-18 GHz 10 Watt GaN Amplifier

TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts. Fully matched to 50 ohms and with inte.

TGA2573 Features

* Frequency Range: 2

* 18 GHz

* Psat: 40.0 dBm at Vd=30 V

* PAE: 25% typical

* Small Signal Gain: 9 dB

* Return Loss: 15 dB

* Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical

* Technology: 0.25 µm GaN on SiC

* Dimensions: 2.55

TGA2573-TriQuintSemiconductor.pdf

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Datasheet Details

Part number:

TGA2573

Manufacturer:

TriQuint Semiconductor

File Size:

568.33 KB

Description:

2-18 ghz 10 watt gan amplifier.

TGA2573 Distributor

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TGA2573 TGA2573 2-18 GHz Watt GaN Amplifier TriQuint Semiconductor