TGA2573 Datasheet (TriQuint Semiconductor) - 2-18 GHz 10 Watt GaN Amplifier

TGA2573, 2-18 GHz 10 Watt GaN Amplifier

TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts.

Fully matched to 50 ohms and with inte

TGA2573 Features

* Frequency Range: 2

* 18 GHz

* Psat: 40.0 dBm at Vd=30 V

* PAE: 25% typical

* Small Signal Gain: 9 dB

* Return Loss: 15 dB

* Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical

* Technology: 0.25 µm GaN on SiC

* Dimensions: 2.55