TQP0102 Datasheet - TriQuint Semiconductor

TQP0102 GaN Power Transistor

The TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0102 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell applications. The TQP0102 can also be used .

TQP0102 Features

* Operating Frequency Range: DC to 4 GHz

* Output Power (PSAT): 5 W

* Drain Efficiency: 68%

* Linear Gain: 19 dB

* Package Dimensions: 3 x 3 x 0.85 mm 16 Pin 3x3mm QFN Functional Block Diagram N/C 1 VG, RF In 2 N/C 3 N/C 4 16 15 14 13 12 N/C 11 VD, RF Out 1

TQP0102 Datasheet (369.56 KB)