TQP0104 Datasheet - TriQuint Semiconductor

GaN Power Transistor

TQP0104 Features

* Operating Frequency Range: DC to 4 GHz

* Output Power (PSAT): 30 W

* Drain Efficiency: 64%

* Linear Gain: 17 dB

* Package Dimensions: 3 x 4 x 0.85 mm TQP0104 30 W, DC to 4 GHz, GaN Power Transistor 20 Pin 3x4mm QFN Functional Block Diagram VG, RF In 1 VG,

TQP0104 General Description

The TQP0104 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0104 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The.

TQP0104 Datasheet (378.92 KB)

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Datasheet Details

Part number:

TQP0104

Manufacturer:

TriQuint Semiconductor

File Size:

378.92 KB

Description:

Gan power transistor.
Applications W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage .

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TQP0104 GaN Power Transistor TriQuint Semiconductor

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TQP0104 Features

TQP0104 General Description

Datasheet Details

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