TQP770001 Datasheet - TriQuint Semiconductor

TQP770001, Bluetooth Two Stage (HBT) Power Amplifier

TQP770001 Preliminary Data Sheet Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant) .
The TQP770001 Bluetooth PA is designed on TriQuint’s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability a.

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TQP770001_TriQuintSemiconductor.pdf

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Datasheet Details

Part number:

TQP770001

Manufacturer:

TriQuint Semiconductor

File Size:

289.97 KB

Description:

Bluetooth Two Stage (HBT) Power Amplifier

Features

* Functional Block Diagram
* InGaP HBT Technology Bluetooth v2.0 class 1 systems High Efficiency: 50% @ 21.5dBm EDR (Enhanced Data Rate) Compliant Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy Will operate un

Applications

* Bluetooth v2.0 + EDR class 1 systems Electrical Specifications Conditions: Vcc = 3.3 V, T = 25°C Package Style Parameter Frequency RF transmit power Vctrl=3.3V Gain @ Pin= -10 dBm PAE @ 21.5dBm Min 2.4 19.5 25.0 Typ Max 2.5 Units GHz dBm dB % 21.0 27.0 50 - 12-Pin 2.0x2.0x0.6mm S

TQP770001 Distributors

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TQP770001 Bluetooth Two Stage HBT Power Amplifier TriQuint Semiconductor

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