Datasheet Specifications
- Part number
- TQP777002
- Manufacturer
- TriQuint Semiconductor
- File Size
- 254.15 KB
- Datasheet
- TQP777002_TriQuintSemiconductor.pdf
- Description
- ISM Band InGaP HBT Matched Power Amplifier
Description
TQP777002 Data Sheet 2.4GHz ISM Band InGaP HBT Matched Power Amplifier Functional Block Diagram Vc1 16 N/C 1 Bias controller N/C 15 Vc2 14 Vc3 13 12 .
Features
* 11 RF Out High Linearity, 2.4 GHz ISM Band PA for 802.11b/g WLAN Systems Integrated Output Power Detector Leadless 3.0 x 3.0 mm SMT Pb-Free Package Temperature Compensated Bias Network with Bias Shutdown Mode EVM < 3.0% @ +18.5 dBm Linear Output Power 802.11g modulation +22 dBmApplications
* in the 2.4GHz ISM band. The device exhibits industry-leading power added efficiency under 802.11b and 802.11g modulated signals. The RF input match and output matches are integrated on chip as are the second and third stage bias chokes. The power amplifier is manufactured using TriQuint’s InGaP HBTTQP777002 Distributors
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