TSP20N65S - N-Channel MOSFET

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Datasheet Details

SJ-FET is new generation of high voltage

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.16Ω.
Ultra Low Gate Charge (typ. Qg = 63nC).
100% avalanche tested.
Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage.

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