TSP2N60M

600V N-Channel MOSFET

Truesemi

TSP2N60M Features

* 2.0A, 600V, RDS(on) = 5.00 @VGS = 10 V

* Low gate charge ( typical 9nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GDS TO-220 GD S TO-220F

* ◀▲ G

* S Absolute Maximum Ratings TC =

TSP2N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP2N60M Datasheet (207.58 KB)

TSP2N60M Datasheet Preview — Preview of TSP2N60M PDF

Datasheet Details

Part number:

TSP2N60M

Manufacturer:

Truesemi

File Size:

207.58 KB

Description:

600v n-channel mosfet.

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TSP2N60M 600V N-Channel MOSFET Truesemi

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TSP2N60M Features

TSP2N60M General Description

Datasheet Details

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