TSP2N60M
Truesemi
207.58kb
600v n-channel mosfet. This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially t
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TSP2N60MZ - N-Channel MOSFET
(Truesemi)
TSP2N60MZ / TSF2N60MZ
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
TSP2N70M - N-Channel MOSFET
(Truesemi)
TSP2N70M/TSF2N70M
TSP2N70M/TSF2N70M
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General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe .
TSP2-QF2012A3 - CHIP LED
(TAITRON)
0805 PACKAGE CHIP LED TSP2-QF2012A3
0805 Package Chip LED
Features
• • • • • Package in 8mm tape on 7” diameter reel Compatible with automatic placeme.
TSP2-XF2012A3 - CHIP LED
(TAITRON)
0805 PACKAGE CHIP LED TSP2-XF2012A3
0805 Package Chip LED
Features
• • • • • Package in 8mm tape on 7” diameter reel Compatible with automatic placeme.
TSP20N60S - N-Channel MOSFET
(Truesemi)
TSP20N60S/TSF20N60S/TSB20N60S 600V N-Channel MOSFET
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September, 2013
SJ-FET
Description
SJ-FET .
TSP20N65S - N-Channel MOSFET
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TSP20N65S/TSF20N65S/TSB20N65S 650V N-Channel MOSFET
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TSP20U60S - Trench Schottky Rectifier
(Taiwan Semiconductor)
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Taiwan Semiconductor
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FEATURES
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- L.
TSP220A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR
(Pan Jit International Inc.)
DATA SHEET
TSP058A~TSP320A
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Protects by limiting voltages and shunting surge curr.
TSP220B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR
(Pan Jit International Inc.)
TSP058B - TSP320B
Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6)
On-State Voltage Max. V T @ 1A V 5 5 5 5 5 5 5.
TSP220C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR
(Pan Jit International Inc.)
TSP058C - TSP320C
Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6)
On-State Voltage Max. V T @ 1A V 5 5 5 5 5 5 5.