TSP2N60MZ Datasheet, Mosfet, Truesemi

TSP2N60MZ Features

• Mosfet
• 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
• Low gate charge ( typical 9nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• E

PDF File Details

Part number:

TSP2N60MZ

Manufacturer:

Truesemi

File Size:

345.91kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially t

TAGS

TSP2N60MZ

Truesemi

📁 Related Datasheet

TSP2N60M - 600V N-Channel MOSFET (Truesemi)
TSP2N60M / TSF2N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. .

TSP2N70M - N-Channel MOSFET (Truesemi)
TSP2N70M/TSF2N70M TSP2N70M/TSF2N70M 700V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe .

TSP2-QF2012A3 - CHIP LED (TAITRON)
0805 PACKAGE CHIP LED TSP2-QF2012A3 0805 Package Chip LED Features • • • • • Package in 8mm tape on 7” diameter reel Compatible with automatic placeme.

TSP2-XF2012A3 - CHIP LED (TAITRON)
0805 PACKAGE CHIP LED TSP2-XF2012A3 0805 Package Chip LED Features • • • • • Package in 8mm tape on 7” diameter reel Compatible with automatic placeme.

TSP20N60S - N-Channel MOSFET (Truesemi)
TSP20N60S/TSF20N60S/TSB20N60S 600V N-Channel MOSFET TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET .

TSP20N65S - N-Channel MOSFET (Truesemi)
TSP20N65S/TSF20N65S/TSB20N65S 650V N-Channel MOSFET TSP20N65S,TSF20N65S, TSB20N65S 650V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET .

TSP20U60S - Trench Schottky Rectifier (Taiwan Semiconductor)
TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - L.

TSP220A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
DATA SHEET TSP058A~TSP320A AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE FEATURES • Protects by limiting voltages and shunting surge curr.

TSP220B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP058B - TSP320B Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6) On-State Voltage Max. V T @ 1A V 5 5 5 5 5 5 5.

TSP220C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP058C - TSP320C Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6) On-State Voltage Max. V T @ 1A V 5 5 5 5 5 5 5.