TSP2N60MZ - N-Channel MOSFET

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Datasheet Details

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2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
Low gate charge ( typical 9nC).
High ruggedness.
Fast switching.
100% avalanche tested.
ESD improved capability.
Improved dv/dt capability GDS TO-220 GD S TO-220F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

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