TF3420 Datasheet (Tuofeng Semiconductor) - N-Channel Enhancement Mode Field Effect Transistor

TF3420, N-Channel Enhancement Mode Field Effect Transistor

The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

This device is suitable for use as a uni-directional or bi-directional load switch.

Standard Product TF3420 is Pb-free Feat

TF3420 Features

* VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source