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TF3420

N-Channel Enhancement Mode Field Effect Transistor

TF3420 Features

* VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source

TF3420 General Description

The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product TF3420 is Pb-free Feat.

TF3420 Datasheet (375.63 KB)

Preview of TF3420 PDF

Datasheet Details

Part number:

TF3420

Manufacturer:

Tuofeng Semiconductor

File Size:

375.63 KB

Description:

N-channel enhancement mode field effect transistor.

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TF3420 N-Channel Enhancement Mode Field Effect Transistor Tuofeng Semiconductor

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