MRF134 Datasheet (Tyco Electronics) - N-CHANNEL MOS BROADBAND RF POWER FET

MRF134, N-CHANNEL MOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode .

designed for wideband large signal amplifier and oscillator applications up to 400 MHz range.

Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency 55% (Typical) Small Signal and Large Signal Characterization Typical Performance

MRF134 Features

* 121

* 123

* 124

* 125

* 126

* 127

* 128

* 128 (continued) The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measured on the M