MRF134 N-CHANNEL MOS BROADBAND RF POWER FET

Tyco Electronics

Description

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N *Channel Enhancement <.

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Datasheet Specifications

Part number: MRF134
Manufacturer: Tyco Electronics
File Size: 208.95 KB
Datasheet: MRF134_TycoElectronics.pdf
Description: N-CHANNEL MOS BROADBAND RF POWER FET

Features

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* 128 (continued) The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measured on the M

Applications

* up to 400 MHz range.
* Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency
* 55% (Typical)
* Small
* Signal and Large
* Signal Characterization
* Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Ga

MRF134 Distributors

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MRF134 N-CHANNEL MOS BROADBAND POWER FET Tyco Electronics

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