MRF134 Datasheet - Tyco Electronics

MRF134 N-CHANNEL MOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency 55% (Typical) Small Signal and Large Signal Characterization Typical Performance.

MRF134 Features

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* 128 (continued) The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measured on the M

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