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* 128 (continued) The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measured on the M
MRF134
Tyco Electronics
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N-channel mos broadband rf power fet.
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement <.
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