MRF1150MA
Tyco Electronics
320.28kb
Microwave power transistor.
TAGS
📁 Related Datasheet
MRF1150MA - (MRF1150MA/B) MICROWAVE POWER TRANSISTORS
(Motorola)
..
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1150MA/D
The RF Line
Microwave Pulse Power Transistors
Design.
MRF1150MB - (MRF1150MA/B) MICROWAVE POWER TRANSISTORS
(Motorola)
..
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1150MA/D
The RF Line
Microwave Pulse Power Transistors
Design.
MRF1150MB - MICROWAVE POWER TRANSISTOR
(Tyco Electronics)
..
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1150MB/D
The RF Line
Microwave Pulse Power Transistor
Designed for Clas.
MRF112 - Half-Inch Diameter Process Sealed Rotaries
(NKK)
Half-Inch Diameter Process Sealed Rotaries
Series MR
Distinctive Characteristics
Low profile body of MRF model acmodates space limitations requir.
MRF10005 - The RF Line Microwave Power Transistor
(Tyco)
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
The RF Line
Microwave Power Transistor
. . . designed for CW and long pulsed mon .
MRF10005 - MICROWAVE POWER TRANSISTOR
(Motorola)
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
Microwave Power Transistor
. . . designed for CW and long pulse.
MRF1000MB - Microwave Pulse Power Transistors
(Tyco)
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1000MB/D
The RF Line
Microwave Pulse Power Transistors
Designed for Class A and AB mon em.
MRF1001A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
(Microsemi)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF1001A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
F.
MRF1002 - MICROWAVE POWER TRANSISTOR
(Motorola)
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1002MA/D
Microwave Pulse Power Transistors
. . . designed for Class B a.
MRF10031 - MICROWAVE POWER TRANSISTOR
(Motorola)
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10031/D
Microwave Long Pulse Power Transistor
Designed for 960 – 1215 M.
