MRF157 Datasheet (Tyco Electronics) - MOS LINEAR RF POWER FET

MRF157, MOS LINEAR RF POWER FET

( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effect Transistor N Channel Enhancement Mode Designed primarily for linear large signal output stages to 80 MHz.

Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) MRF157 600 W, to 80 MHz MOS LINEAR RF POWER FET D G S CASE 368 03, STYLE 2 MAXIMUM RATINGS Ratin

MRF157 Features

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* source threshold voltage, VGS(th). Cgd GATE Cgs DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cds SOURCE REV 1 5 Gate Voltage Rating

* Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate reg