Datasheet4U.com

MRF157 - MOS LINEAR RF POWER FET

Tyco Electronics

📥 Download Datasheet

MRF157 Datasheet Preview — Preview of MRF157 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	MRF157
Manufacturer	Tyco Electronics
File Size	241.56 KB
Description	MOS LINEAR RF POWER FET
Datasheet	MRF157_TycoElectronics.pdf

MRF157 Product details

Features

r>.
to.
source threshold voltage, VGS(th). Cgd GATE Cgs DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cds SOURCE REV 1 5 Gate Voltage Rating.
Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
The gates of these devices are essentially capacitors. Circuits that leave the gate open.
circuited or floating should be avoided. These conditions can result in.

📁 MRF157 Similar Datasheet

MRF1570FNT1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF1570FT1 - RF Power Field Effect Transistors (Motorola)
MRF1570NT1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF1570T1 - RF Power Field Effect Transistors (Motorola)
MRF1500 - MICROWAVE POWER TRANSISTOR (Motorola)
MRF15030 - RF POWER TRANSISTOR (Motorola)
MRF15060 - RF POWER BIPOLAR TRANSISTORS (Motorola)
MRF15060S - RF POWER BIPOLAR TRANSISTORS (Motorola)

Other Datasheets by Tyco Electronics

MRF150 - N-CHANNEL MOS LINEAR RF POWER FET
MRF151 - N-CHANNEL BROADBAND RF POWER MOSFET
MRF151A - RF Power Field-Effect Transistor
MRF151G - N-CHANNEL BROADBAND RF POWER MOSFET
MRF154 - N-CHANNEL BROADBAND RF POWER MOSFET
MRF158 - TMOS BROADBAND RF POWER FET

Published: Apr 19, 2006 |