MRF157 MOS LINEAR RF POWER FET

Tyco Electronics

Description

( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effect Transist.

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Datasheet Specifications

Part number: MRF157
Manufacturer: Tyco Electronics
File Size: 241.56 KB
Datasheet: MRF157_TycoElectronics.pdf
Description: MOS LINEAR RF POWER FET

Features

* r>
* to
* source threshold voltage, VGS(th). Cgd GATE Cgs DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cds SOURCE REV 1 5 Gate Voltage Rating
* Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate reg

Applications

* LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equiv

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MRF157 MOS LINEAR POWER FET Tyco Electronics

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