MRF154 N-CHANNEL BROADBAND RF POWER MOSFET

Tyco Electronics

Description

( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF154/D The RF MOSFET Line RF Power Field Effect Transist.

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Datasheet Specifications

Part number: MRF154
Manufacturer: Tyco Electronics
File Size: 226.85 KB
Datasheet: MRF154_TycoElectronics.pdf
Description: N-CHANNEL BROADBAND RF POWER MOSFET

Features

* er is strongly recommended between the device mounting surfaces and the main heatsink. It should be at least 1/4″ thick and extend at least one inch from the flange edges. A thin layer of thermal compound in all interfaces is, of course, essential. The recommended torque on the 4
* 40 mounting

Applications

* GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high
* on the order of 109 ohms
* resulting in a leakage current of a few nanoamperes. Gate control is achieved by

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MRF154 N-CHANNEL BROADBAND POWER MOSFET Tyco Electronics

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