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MRF151A Datasheet - Tyco Electronics

MRF151A RF Power Field-Effect Transistor

www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 5.0 1.0 Vdc mAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain <.

MRF151A Datasheet (341.55 KB)

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Datasheet Details

Part number:

MRF151A

Manufacturer:

Tyco Electronics

File Size:

341.55 KB

Description:

Rf power field-effect transistor.

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MRF151A Power Field-Effect Transistor Tyco Electronics

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