P0604BD Datasheet - UNIKC

P0604BD MOSFET

P0604BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 7mΩ @VGS = 10V ID 64A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 64 40 150 Avalanche Current IAS 50 Avalanche Energy L = 0.1mH EAS 125 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operatin.

P0604BD Datasheet (439.77 KB)