P0610BT Datasheet - UNIKC

P0610BT N-Channel MOSFET

P0610BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ @VGS = 10V ID2 120A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 120 76 375 Avalanche Current IAS 39 Avalanche Energy L = 1mH EAS 770 Power Dissipation TC = 25 °C TC = 100 °C PD 208 83 O.

P0610BT Datasheet (710.06 KB)