P082ABD8 Datasheet - UNIKC

P082ABD8 MOSFET

P082ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 8mΩ @VGS = 10V ID 52A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 52 33 130 Avalanche Current IAS 23 Avalanche Energy L=0.1mH EAS 76 Power Dissipation TC= 25 °C TC= 100°C PD 36 14 Operating Junction & Storage Temperature Rang.

P082ABD8 Datasheet (516.75 KB)