P1006BD Datasheet - UNIKC

P1006BD N-Channel Transistor

P1006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 66 42 150 Avalanche Current IAS 38.5 Avalanche Energy L =0.1mH EAS 74 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Juncti.

P1006BD Datasheet (698.23 KB)