P1006BIS Datasheet - UNIKC

P1006BIS MOSFET

P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 66 42 150 Avalanche Current IAS 38.5 Avalanche Energy L = 0.1mH EAS 74 Power Dissipation TC= 25 °C TC= 100°C PD 96 38 Junct.

P1006BIS Datasheet (673.58 KB)