P1006BTFS Datasheet - UNIKC

P1006BTFS N-Channel MOSFET

P1006BTF / P1006BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10mΩ @VGS = 10V 47A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID 47 29 IDM 150 Avalanche Current IAS 38 Avalanche Energy L = 0.1 mH EAS 72.7 Power Dissipation TC= 25 °C TC.

P1006BTFS Datasheet (789.56 KB)