P1606BD Datasheet - UNIKC

P1606BD N-Channel Transistor

P1606BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 18.5mΩ @VGS = 10V ID 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 42 26 110 Avalanche Current IAS 41 Avalanche Energy L = 0.1mH EAS 85 Power Dissipation TC = 25 °C TC = 100 °C PD 62 25 Operating Junction & Storage Temp.

P1606BD Datasheet (878.18 KB)